PART |
Description |
Maker |
IRF510S IRF510STRL IRF510STRR |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=5.6A)
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IRF[International Rectifier]
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IRF5Y1310CM |
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package THRU-HOLE (TO-257AA) 100V, N-CHANNEL POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.044ohm, Id=18A*)
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IRF[International Rectifier]
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IRFD9110 |
-100V Single P-Channel HEXFET Power MOSFET in a HEXDIP package Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-0.70A) Power MOSFET(Vdss=-100V Rds(on)=1.2ohm Id=-0.70A)
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IRF[International Rectifier]
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IRFR9110TRL IRFU9110 IRFR9110 |
-100V Single P-Channel HEXFET Power MOSFET in a I-Pak package Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-3.1A) HEXFET? Power MOSFET
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IRF[International Rectifier]
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IRFS59N10D IRFSL59N10D IRFB59N10D IRFB59N10 IRFS59 |
Power MOSFET(Vdss=100V/ Rds(on)max=0.025ohm/ Id=59A) Power MOSFET(Vdss=100V, Rds(on)max=0.025ohm, Id=59A) HEXFET? Power MOSFET 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package
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IRF[International Rectifier]
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IRF5Y3710CM |
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.035ohm, Id=18A*) 功率MOSFET N沟道(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.035ohm,身份证\u003d 18A POWER MOSFET N-CHANNEL(Vdss=100V Rds(on)=0.035ohm Id=18A*) THRU-HOLE (TO-257AA) 100V, N-CHANNEL 100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
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International Rectifier, Corp. IRF[International Rectifier]
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MJD112-001 MJD112RL MJD112T4 MJD112T4G MJD117 MJD1 |
Power 2A 100V Darlington NPN Power 2A 100V Darlington PNP Complementary Darlington Power Transistors
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ONSEMI[ON Semiconductor]
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HUF76633S3S HUF76633P3 HUF76633S3ST HUF76633S3STNL |
38A,100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFETPower MOSFET 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 39 A, 100 V, 0.037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 39A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 100V的五(巴西)直| 39A条(丁)|63AB 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 39 A, 100 V, 0.037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp. Intersil, Corp.
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IRF5M5210 IRF5M5210D IRF5M5210UPBF IRF5M5210-15 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-254AA package 34 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.07ohm, Id=-34A) Avalanche Energy Ratings
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IRF[International Rectifier]
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TSD4M150 TSD4M150F TSD4M150V |
V(ds): 100V; V(dgr): 100V; V(gs): -20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits
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SGS Thomson Microelectronics STMicroelectronics ST Microelectronics
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IRF9140 |
-100V,Thru-Hole Radiation Hardened Power MOSFET(-100V,???瀹?????灏????娌??MOSFET)
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International Rectifier
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